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 MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
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Features
* * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) SOT-23
A C B B TOP VIEW E C
Dim A B C D E
K J L
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
Mechanical Data
* * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
E
D G H M
G H J K L M
C
B
E
All Dimensions in mm
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC PD RJA TJ, TSTG Value 80 80 12 500 300 417 -55 to +150 Unit V V V mA mW C/W C
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product
Notes:
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)EBO V(BR)CEO ICBO ICES IEBO hFE VCE(SAT) VBE(SAT) Cobo Cibo fT Min 80 12 80 10,000 10,000 Max 100 500 100 1.5 2.0 Unit V V V nA nA nA V V pF pF MHz Test Condition IC = 100A IE = 0 IE = 100A IC = 0 IC = 100A IB = 0 VCB = 60V, IE = 0 VCE = 10V VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, IB = 100A IC = 100mA, VCE = 5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz
8.0 Typical 15 Typical 125
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30367 Rev. 9 - 2
1 of 3 www.diodes.com
MMBTA28
(c) Diodes Incorporated
400 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature
1.1 1.0 0.9 0.8 0.7 0.6
TA = 150C TA = 25C IC IB = 1000 T A = -50C
0.5 0.4 0.3 0.2 0.1 0 1 100 1,000 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current
1.6 VBE(ON), BASE-EMITTER VOLTAGE (V) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Voltage vs. Collector Current 100
TA = 150C TA = 25C VCE = 5V TA = -50C
1,000,000
VCE = 5V
hFE, DC CURRENT GAIN
100,000
TA = 150C T A = 25C
10,000
TA = -50C
1,000
100
1
10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1 1 10 COLLECTOR CURRENT IC (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current 100
DS30367 Rev. 9 - 2
2 of 3 www.diodes.com
MMBTA28
(c) Diodes Incorporated
Ordering Information
Part Number MMBTA28-7-F
Notes:
(Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6R
K6R = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
2008 V May 5 Jun 6
YM
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30367 Rev. 9 - 2
3 of 3 www.diodes.com
MMBTA28
(c) Diodes Incorporated


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